JPH0338730B2 - - Google Patents
Info
- Publication number
- JPH0338730B2 JPH0338730B2 JP56145713A JP14571381A JPH0338730B2 JP H0338730 B2 JPH0338730 B2 JP H0338730B2 JP 56145713 A JP56145713 A JP 56145713A JP 14571381 A JP14571381 A JP 14571381A JP H0338730 B2 JPH0338730 B2 JP H0338730B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- reaction chamber
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56145713A JPS5848416A (ja) | 1981-09-16 | 1981-09-16 | 量産型薄膜生成装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56145713A JPS5848416A (ja) | 1981-09-16 | 1981-09-16 | 量産型薄膜生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5848416A JPS5848416A (ja) | 1983-03-22 |
JPH0338730B2 true JPH0338730B2 (en]) | 1991-06-11 |
Family
ID=15391397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56145713A Granted JPS5848416A (ja) | 1981-09-16 | 1981-09-16 | 量産型薄膜生成装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5848416A (en]) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4423701A (en) * | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
JPH0719750B2 (ja) * | 1984-06-22 | 1995-03-06 | 鐘淵化学工業株式会社 | グロ−放電型成膜装置 |
JPH0719751B2 (ja) * | 1984-07-02 | 1995-03-06 | 鐘淵化学工業株式会社 | 成膜方法 |
NL1022489C2 (nl) * | 2003-01-24 | 2004-07-28 | Stichting Energie | Koppelinrichting voor dunnefilm fotovoltaïsche cellen. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112066A (en) * | 1977-03-11 | 1978-09-30 | Fujitsu Ltd | Plasma treatment apparatus |
JPS5729309Y2 (en]) * | 1977-03-30 | 1982-06-26 |
-
1981
- 1981-09-16 JP JP56145713A patent/JPS5848416A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5848416A (ja) | 1983-03-22 |
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